报告题目：Impact of SiC and RC-IGBT on Drive and Power Supply for xEV
报告人：Dr. Tatsuhiko Fujihira （藤平龍彦 博士）
Dr. Tatsuhiko Fujihira is the CTO for Electronic Devices, Fuji Electric Co., Ltd., Japan. He has more than 30 years of experience in the research and development of power semiconductor devices, including IGBT, power MOSFET, and SiC. He has authored more than 30 papers, including the world-first technical paper of superjunction devices, in which he named the device as “Superjunction”, holds more than 100 patents, and is the receiver of three scientific awards.
Abstract：Enhancement of national regulations for fuel economy and/or CO2 emission forces car manufacturers to develop and sell more and more xEVs. Power semiconductor devices are the key to develop efficient drives and power supplies for xEV. Si RC-IGBT has started its contribution to xEV and SiC will follow. The era of new devices are starting. They increase the power density, reduce the volume/weight/materials, and improve the efficiency of electric systems. Especially, the impact of SiC is dramatic.